Advertisement

Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

  • Atabek E. Atamuratov
  • Ralf Granzner
  • Mario Kittler
  • Zuhra Atamuratova
  • Mahkam Halillaev
  • Frank Schwierz
Conference paper
Part of the NATO Science for Peace and Security Series B: Physics and Biophysics book series (NAPSB)

Abstract

In this work, the influence of a single positive elementary charge trapped either in the oxide or at the oxide-semiconductor interface on Random Telegraph Noise (RTN) has been investigated and the relative RTN amplitude ΔI D I D in nanometer MOSFET was simulated. Since our investigations were focused on the RTN amplitude, we considered only the steady-state and did not investigate the dynamics of charging/discharging the trap.

For considering the impact of a single charge trapped in the oxide or at the interface, we assumed that this single positive charge was homogeneously distributed across a certain gate oxide volume or across a certain interface area. By varying the length of the charged region, containing a homogeneously distributed single charge, from 54 nm down to 0.8 nm, it is found that the RTN amplitude in-creases for decreasing length and reaches saturation for lengths below 20 nm.

For identical extensions and positions in the gate length direction, a trapped interface charge generates a RTN amplitude up to two times larger compared to a charge trapped in the oxide. For both oxide and interface charges the maximal RTN amplitude is observed for a trap located right above the center of the channel. Results show that the main contribution to the RTN amplitude comes from the variation of the carrier density in the channel due to the trapped charge.

Keywords

Trap Charge Charge Trapping Single Charge Identical Extension Charged Area 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    Bol D, Ambroise R, Flandre D, Legat J-D (2009) Interests and limitations of technology scaling for subthreshold logic. IEEE Tans Very large Scale Integr Syst 17(10):1508–1519CrossRefGoogle Scholar
  2. 2.
    Markovic D, Wang CC, Alarco’n LP, Liu T-T, Rabaey JM (2010) Ultralow-power design in near-threshold region. Proc IEEE 98(2):237–252CrossRefGoogle Scholar
  3. 3.
    Dreslinski RG, Wieckowski M, Blaauw D, Sylvester D, Mudge T (2010) Near-threshold computing: reclaiming Moore’s Law through energy efficient integrated circuits. Proc IEEE 98(2):253–266CrossRefGoogle Scholar
  4. 4.
    Campbell JP, Yu LC, Cheung KP, Qin J, Suehle JS, Oates A, Sheng K (2009). Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs. In: Proceedings of the IEEE international conference on IC design and technology ICICDT 2009, pp 17–20Google Scholar
  5. 5.
    Campbell JP, Qin J, Cheung KP, Yu L, Suehlel JS, Oates A, Sheng K (2008) The origins of random telegraph noise in highly scaled SiON nMOSFETs. Integrated reliability workshop, pp 105–109Google Scholar
  6. 6.
    Cheung KP, Campbell JP (2011) On the magnitude of random telegraph noise in ultra-scaled MOSFETs. In: Proceedings of the IEEE international conference on ICICDT, pp 1–4Google Scholar
  7. 7.
    Asenov A, Balasubramaniam R, Brown AR, Davies JH (2003) RTS amplitude in decananometer MOSFETs: 3-D simulation study. IEEE Trans Electron Dev 50:839–845ADSCrossRefGoogle Scholar
  8. 8.
    Asenov A, Balasubramaniam R, Brown AR, Davies JH, Saini S (2000) Random telegraph signal amplitudes in sub 100 nm (Decanano) MOSFETs: 3D “atomistic” simulation study. In: Proceedings of the IEDM technical digest, pp 279–282Google Scholar
  9. 9.
    Hung KK, Ko PK, Hu CM, Cheng YC (1990) A unified model for the flicker noise in metal oxide-semiconductor field-effect transistors. IEEE Trans Electron Dev 37:654–665ADSCrossRefGoogle Scholar
  10. 10.
    Ohata A, Toriumi A, Iwase M, Natori K (1990) Observation of random telegraph signals – anomalous nature of defects at the Si/SiO2 interface. J Appl Phys 68: 200–204ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  • Atabek E. Atamuratov
    • 1
  • Ralf Granzner
    • 2
  • Mario Kittler
    • 2
  • Zuhra Atamuratova
    • 1
  • Mahkam Halillaev
    • 1
  • Frank Schwierz
    • 2
  1. 1.Department of PhysicsUrganch State UniversityUrganchUzbekistan
  2. 2.Department of Solid-State Electronics, Institute of Micro- and NanotechnologiesIlmenau University of TechnologyIlmenauGermany

Personalised recommendations