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Analysis of Subthreshold Characteristics for Doping Concentration of DGMOSFET Using Series Form of Potential

  • Jihyeong Han
  • Hakkee Jung
  • Ohshin Kwon
  • Choonshik Park
Chapter
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 235)

Abstract

In this paper, subthreshold characteristics have been presented for DGMOSFET, using the analytical model based on series form of potential distribution. The analytical potential distribution model of Poisson equation, validated in previous researches, has been used to analyze transport characteristics. Threshold voltage roll-off and drain induced barrier lowering (DIBL) are very important short channel effects (SCEs) for nano structures since those determine ON/OFF of MOSFETs. Since the threshold voltage is reduced by drain voltage in short channel and smaller gate voltage can cause a strong inversion, DIBL plays an important role in digital applications. We have investigated the DIBL and threshold voltage characteristics for variation of doping concentration from 1021 to 1025 m−3. As a results, the smaller channel thickness and the higher doping concentration become, the higher the threshold voltage becomes. We know DIBL is decreasing with decreasing channel thickness.

Keywords

DGMOSFET Channel thickness Doping concentration DIBL Threshold voltage Conduction path 

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Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  • Jihyeong Han
    • 1
  • Hakkee Jung
    • 1
  • Ohshin Kwon
    • 2
  • Choonshik Park
    • 3
  1. 1.Department of Electronic EngineeringKunsan National UniversityMiryong-dong, Kunsan-siKorea
  2. 2.Department of Control and Robotics EngineeringKunsan National UniversityMiryong-dong, Kunsan-siKorea
  3. 3.Sheenbang Electronics Co., LTD.Seocho-guKorea

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