Analysis on Off-Current of Double Gate MOSFET for Composition of Forward and Backward Current

Chapter
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 235)

Abstract

This paper has analyzed the change of forward and backward current for channel doping concentration and structures to analyze off-current of double gate (DG) MOSFET. The Gaussian function as channel doping distribution has been used to obtain the similar results, compared with experimental ones, and the two dimensional analytical potential distribution model derived from Poisson’s equation has been used to analyze the off-current. The off-current has been analyzed for the change of projected range and standard projected range of Gaussian function with device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. As a result, this research shows the off-current has greatly influenced on forward and backward current for device parameters, especially for the shape of Gaussian function for channel doping concentration.

Keywords

DGMOSFET Device parameter Off-current Channel structure Poisson equation Gaussian function 

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Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  1. 1.Department of Electronic EngineeringKunsan National UniversityMiryong-dong Kunsan-siKorea

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