2D Analysis of Breakdown Voltages for Device Dimension of Double Gate MOSFET Using Nonlinear Doping Profile

  • Hakkee Jung
  • Dongsoo Cheong
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 235)


The breakdown voltages for double gate MOSFET have been analyzed using nonlinear doping profiles in channel by applying 2D analytical solutions for potential distribution. Since the potential distributions based on Poisson equation show the change of potential distribution for width direction is trivial for double gate MOSFET, 2D analysis is reasonable. One of the short channel effects is low breakdown voltage. The breakdown voltages for double gate MOSFET have been investigateed for the change of channel length, channel thickness, gate oxide thickness and doping profile with Gaussian distribution as nonlinear function, using Fulop’s avalanche breakdown model. As a result, we know the breakdown voltages have greatly changed for device dimension and doping profile.


Breakdown voltage Double gate Short channel effects Poisson equation Gaussian distribution Potential distribution 


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© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  1. 1.Department of Electronic EngineeringKunsan National UniversityMiryong-dong Gunsan-si, ChonbukKorea

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