2D Analysis of Breakdown Voltages for Device Dimension of Double Gate MOSFET Using Nonlinear Doping Profile

Chapter
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 235)

Abstract

The breakdown voltages for double gate MOSFET have been analyzed using nonlinear doping profiles in channel by applying 2D analytical solutions for potential distribution. Since the potential distributions based on Poisson equation show the change of potential distribution for width direction is trivial for double gate MOSFET, 2D analysis is reasonable. One of the short channel effects is low breakdown voltage. The breakdown voltages for double gate MOSFET have been investigateed for the change of channel length, channel thickness, gate oxide thickness and doping profile with Gaussian distribution as nonlinear function, using Fulop’s avalanche breakdown model. As a result, we know the breakdown voltages have greatly changed for device dimension and doping profile.

Keywords:

Breakdown voltage Double gate Short channel effects Poisson equation Gaussian distribution Potential distribution 

References

  1. 1.
    Technologo Roadmap on Semiconductor (2007) Semiconductor industry association. http://public.itrs.net
  2. 2.
    Hongkyun J, Xianzhe J, Kwangki R (2012) Performance improvement and power consumption reduction of an embedded RISC core. J Inf Commun Convergence Eng 10:78–84Google Scholar
  3. 3.
    Ming-Long F, Yu-Sheng W, Vita Pi-Ho H, Pin S, Ching-Te C (2010) Investigation of cell stability and write ability of FinFET subthreshold SRAM using analytical SNM model. IEEE Trans Electron Devices 57:1375–1381Google Scholar
  4. 4.
    Sang-Hyun O, Don M, Hergenrother J (2000) Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs. IEEE Electron Device Lett 21:445–447CrossRefGoogle Scholar
  5. 5.
    Kumar M, Dubey S, Tiwari PK, Jit S (2010) Analytical modeling and ATLAS based simulation of the surface potential of double-material-gate strained-Si on silicon-germanium-on-insulator(DMG-SGOI) MOSFETs. In: 2011 international conference on multimedia, signal processing and communication technologies, pp 228–230Google Scholar
  6. 6.
    Jean-Michel S, Nicolas C, Christophe L, Benjamin I, Fabien P (2011) Charge-based modeling of junction less double-gate field-effect transistors. IEEE Trans Electron Devices 58:2628–2637CrossRefGoogle Scholar
  7. 7.
    Eleftherios G, Andreas T, Dimitrios H, Charalabos A, Gerard G, Jalal J (2011) Effect of localized interface charge on the threshold voltage of short-channel undoped symmetrical double-gate MOSFETs. IEEE Trans Electron Devices 58:433–440CrossRefGoogle Scholar
  8. 8.
    Hossein M, Huda A, Chang-Fu D, Susthitha M, Burhanuddin M (2011) A new analytical model for lateral breakdown voltage of double-gate power MOSFETs. In: 2011 IEEE regional symposium on micro and nano electronics, pp 92–95Google Scholar
  9. 9.
    Tiwari PK, Kumar S, Mittal S,Srivastava V, PandeyK U, Jit S (2009) A 2D analytical model of the channel potential and threshold voltage of double-gate(DG) MOSFETs with vertical gaussian doping profiles In: IMPACT-2009, pp 52–55Google Scholar
  10. 10.
    Fulop W (1967) Calculation of Avalanche Breakdown Voltages of Silicon p-n Junctions. Solid-State Electronics 10:39–43CrossRefGoogle Scholar
  11. 11.
    Hakkee J (2012) The analysis of breakdown voltage for the double-gate MOSFET Using the Gaussian doping distribution. J Inf Commun Convergence Eng 10:200–204CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  1. 1.Department of Electronic EngineeringKunsan National UniversityMiryong-dong Gunsan-si, ChonbukKorea

Personalised recommendations