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Source/Drain Junctions in Germanium: Experimental Investigation

  • Geert Hellings
  • Kristin De Meyer
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 42)

Abstract

Chapter 2 investigates the fabrication of shallow junctions in germanium experimentally, targeting application in a scaled germanium MOSFET technology.

Keywords

Sheet Resistance Rapid Thermal Annealing Junction Depth Thread Dislocation Density Sheet Resistance Measurement 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  • Geert Hellings
    • 1
  • Kristin De Meyer
    • 1
  1. 1.CMOS Technology DepartmentIMECLeuvenBelgium

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