Abstract
Non-volatile memories were selected to introduce a model-based quantitative performance indicator methodology. The complex example of flash memories is used to introduce and apply the methodology to quantify product innovation during the memory development process. Non-volatile solid-state storage systems are a key enabler technology for mostly all mobile devices and for multi-core based systems in general. The development requirements for flash memories are extremely high managing the non-volatile design and technology complexity, achieving the cost targets and incorporating disruptive innovation at the right moment in time.
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References
C. Friederich, J. Hayek, A. Kux, T. Muller, N. Chan, G. Kobernik, M. Specht, D. Richter, D. Schmitt-Landsiedel, Novel model for cell—system interaction (MCSI) in NAND Flash, in IEDM Technical Digest, (Washington, 2008), pp. 1–4
H. Kroemer, Nobel Physica Laureate, in Lex Prix Nobel, (2000)
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Richter, D. (2014). Conclusion and Outlook. In: Flash Memories. Springer Series in Advanced Microelectronics, vol 40. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6082-0_8
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DOI: https://doi.org/10.1007/978-94-007-6082-0_8
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