An InGaP HBT MMIC High Efficient Dual Path Power Amplifier for CDMA Handset Application

Abstract

In this paper a high efficient dual path power amplifier (PA) for the code division multiple access (CDMA) handset applications is proposed. A dual path PA consists of two different size Pas combined parallel with single input/output matching circuits. The dual path PA is fabricated in the InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic micro-wave integrated circuit (MMIC) in the CDMA cellular, 824–849 MHz and operates at a supply voltage of 3.4 V. The dual path PA exhibits an output power of 31 dBm, a 36 % power added efficiency (PAE) at an output power, and a −46 dBc adjacent channel power ratio (ACPR) at an 885 kHz offset frequency in the high power mode and an output power of 21 dBm, a 14.2 % PAE at a 16 dBm output level, and a −49 dBc ACPR at a 885 kHz offset frequency in the low power mode. This concept is also available for the other CDMA/OFDM specifications.