Abstract
The widespread use of NAND Flash memories in SSDs has unleashed new avenues of innovation for the enterprise and client computing. System-wide architectural changes are required to make full use of the advantages of SSDs in terms of performance, reliability and power. Signal processing technologies are becoming more and more popular to countermeasure all the parasitic effects of a Flash NAND array: the first part of this chapter deals with such techniques.
On the other side, the emerging storage class memories (SCM) such as PCRAM, FeRAM, ReRAM and MRAM are becoming a viable alternative to commonly used volatile and nonvolatile memories. Being bit-alterable like DRAM and nonvolatile like a Flash memory, together with CMOS-process compatibility, these non-volatile random access memories have a potential to revolutionize various aspects of the computing platform architectures. A 3D TSV-integrated SSD with hybrid memory configuration which uses storage class memories (SCMs) and NAND Flash memories is a promising solution for the future memory system. This chapter describes the signal processing technologies and data management which realizes the high speed operation, low power consumption and high reliability of the SCM and NAND Flash integrated hybrid SSDs.
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Takeuchi, K. (2013). Flash Signal Processing and NAND/ReRAM SSD. In: Inside Solid State Drives (SSDs). Springer Series in Advanced Microelectronics, vol 37. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-5146-0_13
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DOI: https://doi.org/10.1007/978-94-007-5146-0_13
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