Abstract
In this paper, we develop an efficient perturbation method to predict the quantum dots (QDs)- and quantum wires (QWRs)-induced elastic and electric fields in and around these nanostructures. By introducing a homogeneous reference material, a novel piezoelectric perturbation theory based on the Green’s function solution is presented so that the strain and electric fields inside and outside the arbitrarily shaped and anisotropic QWR/QD structure can be accurately calculated. This semi-analytical method is applied to both InN/AlN QWR and InAs/GaAs QD structures, showing that the anisotropic and heterogeneous properties can have a significant influence on the induced fields. The relative differences of the strain and electric fields inside the QWR/QD between the simplified isotropic and homogeneous model and the real anisotropic and heterogeneous one can be as high as 50%. This indicates that the real anisotropic and heterogeneous model is necessary for the prediction of the QWR/QD-induced fields in these nanostructures.
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Acknowledgement
This work was supported by the NSFC (10602050) and Jiansu Government Scholarship for Overseas Studies.
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Chu, H.J., Pan, E., Wang, J. (2013). Elastic and Electric Fields in Quantum Wire/Dot Nanostructures via the Perturbation Theory. In: Cocks, A., Wang, J. (eds) IUTAM Symposium on Surface Effects in the Mechanics of Nanomaterials and Heterostructures. IUTAM Bookseries (closed), vol 31. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-4911-5_3
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DOI: https://doi.org/10.1007/978-94-007-4911-5_3
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