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ICAME 2011 pp 651–654Cite as

Mössbauer study of 119Sn in 119In* implanted 3C-SiC

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119Sn Mössbauer measurements have been made on a 3C-SiC single crystal implanted with 60 keV precursor radioactive 119In ∗  ions at ISOLDE/CERN. Spectra collected at sample temperatures of 300–670 K have been analysed in terms of two single lines and a quadrupole split doublet, which based on their isomer shifts are assigned respectively to Sn ions located on substitutional Si sites (SnSi) and interstitial sites (SnI) and in defect complexes near substitutional sites. The substitutional SnSi fraction increases from 25% at room temperature to 60% at 680 K.


  • 119In implantation
  • SiC
  • 119Sn-Mössbauer spectroscopy

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Correspondence to Krishanlal Bharuth-Ram .

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© 2011 Springer Science+Business Media B.V.

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Masenda, H. et al. (2011). Mössbauer study of 119Sn in 119In* implanted 3C-SiC. In: Yoshida, Y. (eds) ICAME 2011. Springer, Dordrecht.

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