Silicon Carbide Schottky Diodes for Alpha Particle Detection
The fabrication and characterization of SiC Schottky diodes for the detection of alpha particles at room temperature are described. A 5 × 5 matrix of diodes has been fabricated in order to verify the dependence of the device response on randomly distributed wafer defects. A dedicated exposure apparatus has been fabricated to test the detectors. Some preliminary alpha energy spectra obtained with the lowest reverse current diodes are shown.
KeywordsAlpha Particle Schottky Contact Alpha Energy Diode Characteristic Stencil Mask
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