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Controllable Semiconductor Photonic Band Gap Structures

  • Igor Nefedov
  • Victor Gusyatnikov
  • Evgenii Altshuller
  • Yurii Morozov
Part of the NATO Science Series book series (NAII, volume 89)

Abstract

The change in the refractive index of GaAs due to the light-induced generation of nonequilibrium charge carriers is shown to substantially change the transmission of a one-dimensional GaAs/GaAlAs photonic band-gap structure, allowing low-threshold optical switching. The transmission characteristics of this structure can be tuned not only by light, but also by electric field, which makes it possible to use the same structure as an electro-optical switch. We discuss also a possibility to change dramatically the refractive index of one of the layers, producing a peak inside the band gap. Such a change can be performed by injection of the carriers into one of the layers.

Keywords

Transmission Coefficient GaAs Layer Nonequilibrium Charge Carrier Bias Electric Field Intrinsic Absorption Edge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 2002

Authors and Affiliations

  • Igor Nefedov
    • 1
    • 2
  • Victor Gusyatnikov
    • 3
  • Evgenii Altshuller
    • 3
  • Yurii Morozov
    • 1
    • 2
  1. 1.Radio LaboratoryHelsinki University of TechnologySaratovRussia
  2. 2.Institute of Radio Engineering and ElectronicsRussian Academy of SciencesSaratovRussia
  3. 3.Saratov State UniversitySaratovRussia

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