Controllable Semiconductor Photonic Band Gap Structures

  • Igor Nefedov
  • Victor Gusyatnikov
  • Evgenii Altshuller
  • Yurii Morozov
Part of the NATO Science Series book series (NAII, volume 89)


The change in the refractive index of GaAs due to the light-induced generation of nonequilibrium charge carriers is shown to substantially change the transmission of a one-dimensional GaAs/GaAlAs photonic band-gap structure, allowing low-threshold optical switching. The transmission characteristics of this structure can be tuned not only by light, but also by electric field, which makes it possible to use the same structure as an electro-optical switch. We discuss also a possibility to change dramatically the refractive index of one of the layers, producing a peak inside the band gap. Such a change can be performed by injection of the carriers into one of the layers.


Transmission Coefficient GaAs Layer Nonequilibrium Charge Carrier Bias Electric Field Intrinsic Absorption Edge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Yablonovitch, E. (1987) Inhibited spontaneous emission in solid-state physics and electronics, Phys. Rev. Lett. Vol. 58, pp. 2059–2062CrossRefGoogle Scholar
  2. 2.
    John, S. (1987) Strong localization of photons in certain disordered dielectric superlattices, Phys. Rev. Lett. Vol. 58, pp. 2486–2489CrossRefGoogle Scholar
  3. 3.
    Scalora, M., Dowling, J.P., Bowden, CM. and Bloemer, M.J. (1994) Optical limiting and switching of ultrashort pulses in nonlinear photonic band gap materials, Phys. Rev. Lett., Vol. 73, pp. 1368–1371CrossRefGoogle Scholar
  4. 4.
    Nefedov, I.S. and Gusyatnikov, V.N. (2000) Optically controlled GaAs-GaAlAs photonic band gap structure, Journ. of Optics A: Pure and Applied Optics, no. 2, pp. 344–347CrossRefGoogle Scholar
  5. 5.
    Zeeger, K. (1973) Semiconductor Physics, Springer, BerlinGoogle Scholar
  6. 6.
    Sell, D.D., Casey, H.C., and Wecht, K.W. (1974) Concentration dependence of the refractive index for n-and p-type GaAs between 1,2 and 1,8 eV, J. Appl.Phys., Vol. 45 no. 2, pp. 800–807CrossRefGoogle Scholar
  7. 7.
    Casey, H. C, Sell, D. D., and Wecht, K. W. (1975) Concentration dependence of the absorption coefficient for n-and p-type GaAs between 1.3 and 1.6 eV, J. Appl. Phys., Vol. 46 no. 2, pp. 250–257CrossRefGoogle Scholar
  8. 8.
    Spitzer, W.G., and Whelan, J.M. (1959) Infrared absorption and electron effective mass in n-type gallium arsenide, Phys. Rev., Vol. 114 no. 1, pp. 59–63CrossRefGoogle Scholar
  9. 9.
    Balslev I. (1968) Optical absorption due to inter-conduction-minimum transitions in gallium arsenide, Phys. Rev., Vol. 173 no. 3, pp. 762–766CrossRefGoogle Scholar
  10. 10.
    Ganikhanov, F., Burr, K.C., Hilton, D.J., and Tang, C.L. (1999) Femtosecond optical-pulse-induced absorption and refractive-index changes in GaAs in the midinfrared, Phys. Rev. B., Vol. 173 no. 3, pp. 8890–8896CrossRefGoogle Scholar
  11. 11.
    Born, M. and Wolf, E. (1968) Principles of optics, Pergamon Press, Oxford-London-Edinburg-New York-Paris-FrankfurtGoogle Scholar
  12. 12.
    Casey, H.C., and Panish, M.B. (1978) Heterostructure lasers, Part A, Fundamental principles, Academic Press, New York, San Francisco, LondonGoogle Scholar
  13. 13.
    Nefedov, I.S., Gusyatnikov, V. N., Kashkarov, P. K. and Zheltikov, A. M. (2000) Low-Threshold photonic band-Gap optical logic Gates, Lasers Physics, no. 10, pp. 640–643Google Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2002

Authors and Affiliations

  • Igor Nefedov
    • 1
    • 2
  • Victor Gusyatnikov
    • 3
  • Evgenii Altshuller
    • 3
  • Yurii Morozov
    • 1
    • 2
  1. 1.Radio LaboratoryHelsinki University of TechnologySaratovRussia
  2. 2.Institute of Radio Engineering and ElectronicsRussian Academy of SciencesSaratovRussia
  3. 3.Saratov State UniversitySaratovRussia

Personalised recommendations