Abstract
The investigations of electrical and photoelectric parameters of the semiconductor solid solutions Hg 1 − x Mn x Te-based Schottky photodiodes being applicable for λ = 3 ÷ 5 μm and λ = 8 ÷ 14 μm regions are presented in this paper. These diodes overlap the spectral range which is wider than that of InSb-based photodiodes and demonstrate the better perfection of the crystal structure in comparison with the HgCdTe-based photodiodes.
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Ivanchenko, I.V. et al. (2011). Solid Solution Hg 1–x Mn x Te– Based Mid Infrared Schottky Diodes. In: Pereira, M., Shulika, O. (eds) Terahertz and Mid Infrared Radiation. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-0769-6_9
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DOI: https://doi.org/10.1007/978-94-007-0769-6_9
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