Abstract
The aluminium-gallium-indium-antimonide (Al x Ga y In\({}_{1-x-y}\)Sb) material system offers great promise for efficient laser diode operation across the 3 to 5 μm wavelength range. It offers an excellent compromise between the requirements for good electronic and optical confinement and those for low series resistance. In addition, the use of an active region comprising compressively strained Type-I quantum wells (QWs) is predicted to lead to increased gain, which leads to lower threshold current densities and hence reduced non-radiative Auger recombination. In this paper a review of recent progress in the development of this material system is given, including the demonstration of multi-quantum well samples exhibiting photoluminescence up to room temperature, and laser diodes operating up to 219 K.
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Acknowledgements
The author would like to acknowledge the work of T. Ashley, L. Buckle, S. D. Coomber, M. T. Emeny, H. Forman, A. Keir, S. J. Smith, C. J. Storey, and G. M. Williams from QinetiQ in Malvern, S. J. B. Przeslak (University of Bristol), P. J. Carrington, A. Krier, and M. Yin (Lancaster University), G. de Valicourt (now at Alcatel-Thales III-V Laboratory), and A. D. Andreev (University of Surrey).
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Nash, G.R. (2011). Mid-Infrared GaInSb/AlGaInSb Quantum Well Laser Diodes Grown on GaAs. In: Pereira, M., Shulika, O. (eds) Terahertz and Mid Infrared Radiation. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-0769-6_16
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DOI: https://doi.org/10.1007/978-94-007-0769-6_16
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