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Physical Properties of Nanosystems pp 311–318Cite as

Thermoelectricity in Double-Barrier Resonant Tunneling Structures

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Abstract

Resonant tunneling conception has been used to explain the thermo-electrical phenomenon inmolecular nanosystems. Thermovoltage as a function of the temperature is calculated. The reverse of the thermovoltage sign under resonance tunneling through HUMO and LUMO levels is demonstrated. The dependence of the thermovoltage on the distance between electrodes is calculated. A result of calculations is in good agreement with experiment data.

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Author information

Authors and Affiliations

  1. Bogolyubov Institute for Theoretical Physics, NASU, Kiev, 03680, Ukraine

    V. N. Ermakov & S. P. Kruchinin

  2. Japan Advanced Institute of Science and Technology, Ishikawa, 923-1292, Japan

    A. Fujiwara

  3. Institute of Materials Research and Engineering, Singapore, Singapore

    S. J. O’Shea

Authors
  1. V. N. Ermakov
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  2. S. P. Kruchinin
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  3. A. Fujiwara
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  4. S. J. O’Shea
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Corresponding author

Correspondence to V. N. Ermakov .

Editor information

Editors and Affiliations

  1. Jožef Stefan Institute, Jadranska 19, Ljubljana, 1000, Slovenia

    Janez Bonca

  2. Theoretical Physics, Bogolyubov Institute for, Metrologichna 14 b14b, Kiev, 03680, Ukraine

    Sergei Kruchinin

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Ermakov, V.N., Kruchinin, S.P., Fujiwara, A., O’Shea, S.J. (2011). Thermoelectricity in Double-Barrier Resonant Tunneling Structures. In: Bonca, J., Kruchinin, S. (eds) Physical Properties of Nanosystems. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-0044-4_25

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  • DOI: https://doi.org/10.1007/978-94-007-0044-4_25

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  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-007-0043-7

  • Online ISBN: 978-94-007-0044-4

  • eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)

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