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Experimentally Founded Charge Transport Model for Icosahedral Boron-Rich Solids

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Abstract

Charge transport in icosahedral boron-rich solids, in particular in boron carbide, has been controversially discussed. Theoretical band structure calculations, based on idealized instead of real structures, yield qualitatively wrong results; metallic instead of semiconducting behavior in consequence of neglecting intrinsic structural defects. The theoretical bipolaron hypothesis is not compatible with numerous experimental results. In contrast, the actual energy band schemes of β-rhombohedral boron and boron carbide mainly derived from optical investigations allows the consistent description of most of the experimental results. Electronic transport is a superposition of hopping-type and band-type transport, whose share depends on the actual conditions and the antecedent.

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Authors and Affiliations

  1. Institute of Physics, University Duisburg-Essen, Lotharstr. 1, Campus Duisburg, D-47048, Duisburg, Germany

    Helmut Werheit

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  1. Helmut Werheit
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Correspondence to Helmut Werheit .

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  1. Dept. Mechanical, Materials &, Aerospace Engineering, University of Central Florida, Central Florida Blvd. 4000, Orlando, 32816, Florida, USA

    Nina Orlovskaya

  2. Inst. for Problems of Materials Science, Krzhizhanivskii Street 3, Kyiv, 03142, Ukraine

    Mykola Lugovy

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Werheit, H. (2010). Experimentally Founded Charge Transport Model for Icosahedral Boron-Rich Solids. In: Orlovskaya, N., Lugovy, M. (eds) Boron Rich Solids. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-9818-4_4

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  • DOI: https://doi.org/10.1007/978-90-481-9818-4_4

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