Abstract
Program and erase are the only two operations able to modify the content of the cells. Since the content of the cells is strictly related to the number ν of electrons inside the floating gate, these operations involve high electric fields (i.e. high voltages) to exploit the Fowler-Nordheim phenomena (Chap. 3 and change ν. Particular attention must be taken when dealing with high voltages, since a little variation could have dramatic consequences.
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Micheloni, R., Marelli, A. (2010). High voltage overview. In: Inside NAND Flash Memories. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-9431-5_12
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DOI: https://doi.org/10.1007/978-90-481-9431-5_12
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