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Charge pumps, voltage regulators and HV switches

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Abstract

Modifying or reading the number of electrons stored into the floating gate requires a big set of voltages. The high voltage (HV) system has to provide all these voltages with the desired precision, timing and granularity. On top of that, many voltages have a value greater than the NAND power supply VDD, asking for an on-chip charge pump. This chapter deals with the HV basic building blocks.

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References

  1. G. Campardo, R. Micheloni, D. Novosel, VLSI-Design of Non-Volatile Memories, Springer-Verlag, 2005.

    Google Scholar 

  2. L. Crippa, G. Ragone, M. Sangalli, R. Micheloni, U.S. Patent No.7474577 - Circuit and method for retrieving data stored in semiconductor memory cells. Assignee: STMicroelectronics/Hynix Semiconductor.

    Google Scholar 

  3. T. Tanzawa, T. Tanaka, K. Takeuchi, U.S. Patent No.5864504 - Nonvolatile semiconductor memory with temperature compensation for read-verify referencing scheme Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP).

    Google Scholar 

  4. T.-H. Cho, Y.-T. Lee, U.S. Patent No.6870766 - Multi-level flash memory with temperature compensation Assignee: Samsung Electronics Co., Ltd. (Suwon-si, KR).

    Google Scholar 

  5. L. Crippa, M. Sangalli, G. Ragone, R. Micheloni, U.S Patent App. 20070164811–- Multistage regulator for charge-pump boosted voltage applications, not requiring integration of dedicated high voltage high side transistors. Assignee: STMicroelectronics/Hynix Semiconductor.

    Google Scholar 

  6. K. Takeuchi et al., A 56-nm CMOS 99-mm 2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput. IEEE Journal of Solid-State Circuits, Vol. 42, No. 1, Jan 2007 pp 219 - 232.

    Article  Google Scholar 

  7. G.A. Rincon-Mora, Analog IC Design with Low-Dropout Regulators, McGraw-Hill, Electronic Engineering, 2009.

    Google Scholar 

  8. T. Tanzawa, U.S. Patent No.7272046 – High voltage switch suitable for non-volatile memories Assignee: Micron Technology, Inc. (Boise, ID).

    Google Scholar 

  9. J. H. Park et al., U.S. Patent No. 6549461 – Driving circuits for a memory cell array in a NAND-type flash memory device. KR Assignee: Samsung Electronics Co., Ltd. (Kyunggi-Do, KR)

    Google Scholar 

  10. G. Ragone, L. Crippa, M. Sangalli, R. Micheloni, U.S. Patent No.7521983 - High-voltage switch with low output ripple for non-volatile floating-gate memories. Assignee: STMicroelectronics/Hynix Semiconductor.

    Google Scholar 

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Correspondence to R. Micheloni .

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Micheloni, R., Crippa, L. (2010). Charge pumps, voltage regulators and HV switches. In: Inside NAND Flash Memories. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-9431-5_11

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  • DOI: https://doi.org/10.1007/978-90-481-9431-5_11

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  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-481-9430-8

  • Online ISBN: 978-90-481-9431-5

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