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Linear CMOS RF Power Amplifiers for Wireless Applications pp 77–100Cite as

Design of the Frequency-Tunable CMOS RF Power Amplifier

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Part of the book series: Analog Circuits and Signal Processing ((ACSP))

Abstract

This chapter presents the design of an integrated frequency-tunable RF power amplifier for operation in the 3.7 and 5.2 GHz frequency bands. A novel tunable impedance matching network based on coupled inductors is employed at the output of the amplifier. The design of the complete system is described, which includes the integrated planar coupled inductors, the circuit that controls the current flowing through the inductors, and the RF power amplifier. Simulation results for the complete system integrated in a CMOS technology are presented.

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Notes

  1. 1.

    The term loaded describes the quality factor of a circuit element under loaded conditions [4, Chap. 2].

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Authors and Affiliations

  1. École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland

    Dr. Paulo Augusto Dal Fabbro & Prof. Maher Kayal

Authors
  1. Dr. Paulo Augusto Dal Fabbro
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  2. Prof. Maher Kayal
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Correspondence to Paulo Augusto Dal Fabbro .

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Dal Fabbro, P.A., Kayal, M. (2010). Design of the Frequency-Tunable CMOS RF Power Amplifier. In: Linear CMOS RF Power Amplifiers for Wireless Applications. Analog Circuits and Signal Processing. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-9361-5_6

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  • DOI: https://doi.org/10.1007/978-90-481-9361-5_6

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-481-9360-8

  • Online ISBN: 978-90-481-9361-5

  • eBook Packages: EngineeringEngineering (R0)

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