Abstract
This chapter reviews the operation and modeling of bipolar junction transistors (BJTs) and heterojunction bipolar transistors (HBTs). The emphasis is on fundamental device physics and modeling; subsequent chapters give specific details of two advanced models, Mextram and HiCuM. We first give a synopsis of basic BJT device behavior and modeling, and then introduce the Gummel integral charge control relationship, which elegantly and physically encapsulates the core description of BJT operation. The development of approximations to this key relationship, which leads to the widely known and used SGP (SPICE Gummel-Poon) model, are detailed, as are modifications necessary for modeling III-V HBT devices.
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McAndrew, C.C., Tutt, M. (2010). Introduction to Bipolar Transistor Modeling. In: Gildenblat, G. (eds) Compact Modeling. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-8614-3_6
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