Abstract
This chapter reviews recent developments on compact modeling of double-gate and nanowire MOSFETs. It starts with the core, long-channel drain current models of double-gate and nanowire MOSFETs, derived from the analytic solutions of 1-D Poisson and current continuity equations in Cartesian and cylindrical coordinates, respectively. Explicit and continuous solutions to the implicit parameters in both models have been developed. The short-channel models based on the scale length approach to the boundary value problems of 2-D Poisson’s equation in subthreshold are then described, followed by charge and capacitance models for both double-gate and nanowire MOSFETs. A popular, surface-potential based current expression in the literature is examined before concluding the chapter.
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Taur, Y. (2010). Compact Modeling of Double-Gate and Nanowire MOSFETs. In: Gildenblat, G. (eds) Compact Modeling. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-8614-3_14
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DOI: https://doi.org/10.1007/978-90-481-8614-3_14
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