Transport Properties of Co2(Mn, Fe)Si Thin Films
Thin Heusler films with the composition Co2Mn1−x Fe x Si were grown by both sputter and pulsed laser deposition. The samples show a high degree of structural order and very good magnetic properties. The availability of thin film samples on dielectric substrates allowed the systematic investigation of their electronic properties by transport experiments. The normal Hall effect shows a transition from a hole-like charge transport in Co2MnSi to an electron-like transport in Co2FeSi. This is in agreement with calculations, which predict that the substitution of Mn by Fe leads to a band filling and a shift of the Fermi energy. Furthermore, the behavior of the anomalous Hall effect was studied. It is the sum of two opposing mechanisms: an intrinsic contribution, caused by the topology of the Fermi surface and a temperature dependent impurity scattering.
KeywordsFermi Surface Pulse Laser Deposition Hall Effect Heusler Alloy Band Structure Calculation
This work was financially supported by the Deutsche Forschungsgemeinschaft (project P2 in research unit FOR 559).
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