Spintronics pp 243-269 | Cite as

Hard X-Ray Photoelectron Spectroscopy of New Materials for Spintronics

  • Gerhard H. Fecher
  • Claudia Felser


In this work, results of hard X-ray photoelectron spectroscopy (HAXPES) of Heusler compounds and new materials for spintronics are presented. The class of Heusler materials includes some interesting half-metallic and ferromagnetic properties that were predicted by theory. HAXPES allows a direct comparison of the measured and the calculated electronic structure. Valence band spectroscopy of bulk materials by HAXPES is illustrated for the case of the half-metallic ferromagnet Co2MnGe. The feasibility of HAXPES to explore the valence band electronic structure in deeply buried metallic layers is demonstrated for buried Co2MnSi films. The films exhibit the same valence density of states as bulk samples and confirm the promise of an epitaxial, single-crystalline Co2-based Heusler compound film as a ferromagnetic electrode for spintronics devices. The study of complete CoFe(B)/MgO/CoFe(B) tunneling junctions demonstrates the capability of HAXPES to explore the electronic structure in deeply buried layers in a non-destructive way. The improvement of the TMR by annealing of the junction is explained by an improvement of the structure together with a change of the composition in the CoFeB layers.


Valence Band Partial Cross Section Magnetic Tunnel Junction Valence Band Spectrum Heusler Compound 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



This work was financially supported by the Deutsche Forschungsgemeinschaft (project P 7 in DfG research unit FOR 559). The authors are very grateful to K. Kobayashi, S. Ueda, Y. Yamashita, H. Yoshikawa (NIMS, SPring-8, Japan), E. Ikenaga, T. Sugiyama, N. Kawamura, and M. Suzuki (JASRI, SPring-8, Japan) for help with the synchrotron experiments. Thin film samples were provided by T. Ishikawa, T. Taira, T. Uemura, M. Yamamoto (Hokkaido University, Sapporo, Japan), S. Ikeda, H. Ohno (Tohoku University, Sendai, Japan), K. Inomata, H. Sukegawa, and W. Wang (National Institute for Materials Science, Tsukuba, Japan). The authors thank B. Balke, A. Gloskowski, X. Kozina, S. Ouardi, and G. Stryhanyuk (JoGU Mainz) for help with the experiments, for providing bulk samples as well as experimental XRD and magnetization data. Further financial support for the set-up of the phase retarder at BL47XU was provided by DfG-JST (FE633/6-1). The synchrotron radiation HAXPES measurements were performed at BL47XU with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) (Proposal Nos. 2008B0017, 2009B0017) and at BL15XU under the approval of the NIMS beamline station (Proposal Nos. 2007A4903, 2007B4907).


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Copyright information

© Springer Science+Business Media Dordrecht 2013

Authors and Affiliations

  1. 1.Institut für Anorganische Chemie und Analytische ChemieJohannes Gutenberg – UniversitätMainzGermany
  2. 2.Max-Planck-Institut für Chemische Physik fester StoffeDresdenGermany

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