Abstract
Fully-porous pn junctions were fabricated, by anodization of p/n substrates, and electrically tested. Process parameters, current density and illumination, were chosen to take into account the different morphological and mechanical characteristics of porous silicon layers resulting from anodization of the p- and n-type silicon. I–V curves were measured as a function of the aging time. Interestingly, it was found that fully-porous junctions still have a rectifying behavior, which is better evident as the porous silicon oxidizes with aging. The validity of this hypothesis was confirmed by measuring the I–V characteristic of a sample subjected to controlled aging, the latter performed by rapid thermal oxidation on freshly grown structures.
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Bacci, N., Barillaro, G., Diligenti, A. (2010). Technology and I–V Characteristics of Fully Porous PN Junctions. In: Malcovati, P., Baschirotto, A., d'Amico, A., Natale, C. (eds) Sensors and Microsystems. Lecture Notes in Electrical Engineering, vol 54. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-3606-3_26
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DOI: https://doi.org/10.1007/978-90-481-3606-3_26
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