Abstract
Toward the complete integration of color sensors in CMOS technologies, a novel color sensitive device, the Transverse Field Detector, is proposed. The TFD color detection principle is based on the creation of a transverse, V-shaped electric field configuration in a Silicon active layer. The electric field is generated only by means of surface biasing/ collecting electrodes. Taking advantage on the dependence of the Silicon absorption length with respect to the incoming wavelength, each of the surface contacts collect photo-carriers down to a different depth. In this way three spectral functions are obtained at the three electrodes, without the use of any color filter. Newly developed pixel structures and a preliminary Active Pixel readout circuitry design are presented.
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Langfelder, G., Longoni, A., Zaraga, F. (2010). Design and Realization of a Novel Pixel Sensor for Color Imaging Applications in CMOS 90 nm Technology. In: Malcovati, P., Baschirotto, A., d'Amico, A., Natale, C. (eds) Sensors and Microsystems. Lecture Notes in Electrical Engineering, vol 54. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-3606-3_25
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DOI: https://doi.org/10.1007/978-90-481-3606-3_25
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