Abstract
In this paper the realization and the characterization of a new kind of resonant cavity enhanced photodetector (RCE), fully compatible with silicon microelectronic technologies and working at 1.55 μm, are reported.
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Casalino, M. et al. (2010). Fabrication and Characterization of a Silicon Photodetector at 1.55 Micron. In: Malcovati, P., Baschirotto, A., d'Amico, A., Natale, C. (eds) Sensors and Microsystems. Lecture Notes in Electrical Engineering, vol 54. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-3606-3_19
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DOI: https://doi.org/10.1007/978-90-481-3606-3_19
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