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Fabrication and Characterization of a Silicon Photodetector at 1.55 Micron

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Book cover Sensors and Microsystems

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 54))

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Abstract

In this paper the realization and the characterization of a new kind of resonant cavity enhanced photodetector (RCE), fully compatible with silicon microelectronic technologies and working at 1.55 μm, are reported.

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References

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Author information

Authors and Affiliations

  1. Consiglio Nazionale delle Ricerche – IMM sez. Napoli, Via P. Castellino n. 111, Napoli, Italy

    M. Casalino, L. Sirleto, M. Gioffre, G. Coppola, M. Iodice & I. Rendina

  2. Seconda Università degli Studi di Napoli, Via Vivaldi n. 43, 81100, Caserta, Italy

    L. Moretti

Authors
  1. M. Casalino
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  2. L. Sirleto
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  3. M. Gioffre
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  4. G. Coppola
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  5. M. Iodice
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  6. I. Rendina
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  7. L. Moretti
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Editor information

Editors and Affiliations

  1. Dipto. Ingegneria Elettrica, Università di Pavia, Via Ferrata 1, Pavia, 27100, Italy

    Piero Malcovati

  2. Dipto. Fisica, Università Milano-Bicocca, Piazza della Scienza 3, Milano, 20126, Italy

    Andrea Baschirotto

  3. Dipto. Ingegneria Elettronica, Università di Roma, Tor Vergata, Via del Politecnico 1, Roma, 00133, Italy

    Arnaldo d'Amico

  4. Dipto. Ingegneria Eletronica, Universita di Roma - Tor Vergata, Via Orazio Raimondo, Roma, 00173, Italy

    Corrado Natale

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Casalino, M. et al. (2010). Fabrication and Characterization of a Silicon Photodetector at 1.55 Micron. In: Malcovati, P., Baschirotto, A., d'Amico, A., Natale, C. (eds) Sensors and Microsystems. Lecture Notes in Electrical Engineering, vol 54. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-3606-3_19

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  • DOI: https://doi.org/10.1007/978-90-481-3606-3_19

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  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-481-3605-6

  • Online ISBN: 978-90-481-3606-3

  • eBook Packages: EngineeringEngineering (R0)

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