Abstract
Study of the luminescence of Rare Earth ions introduced into III-nitride semiconductor hosts produces a wealth of important information. This chapter describes investigations of photoluminescence and cathodoluminescence spectroscopy on a range of RE-implanted samples, with hosts including GaN, AlGaN and AlInN. Raising the post-implantation annealing temperature is shown to lead to a dramatic increase in RE luminescence intensity, and methods to allow annealing well above the growth temperature of the host are discussed. The high-brightness samples that result enable the resolution of additional fine-structure in the luminescence from GaN:Eu and clarification of multiple sites for the RE. Measurements for AlGaN hosts covering the entire composition range point to the importance of core-excitons in the luminescence process. Adding in information from X-ray microanalysis and high spatial resolution luminescence mapping reveals further details of the effects resulting from annealing and of changes in host composition.
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Martin, R. (2010). Visible Luminescent RE-doped GaN, AlGaN and AlInN. In: O’Donnell, K., Dierolf, V. (eds) Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications. Topics in Applied Physics, vol 124. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-2877-8_7
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DOI: https://doi.org/10.1007/978-90-481-2877-8_7
Publisher Name: Springer, Dordrecht
Print ISBN: 978-90-481-2876-1
Online ISBN: 978-90-481-2877-8
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