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Study and Analysis of Subthreshold Leakage Current in Sub-65 nm NMOSFET

  • Krishna Kumar
  • Pratyush Dwivedi
  • Aminul Islam
Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 433)

Abstract

As the technology scales down, the subthreshold leakage increases exponentially which leads to a dramatic increase in static power consumption especially in nanoscale devices. Consequently, it is very important to understand and estimate this leakage current so that various leakage minimization techniques can be devised. So in this paper we attempt to estimate the subthreshold leakage current in an NMOSFET at 16, 22, 32 and 45 nm technology nodes. Various factors which affect the subthreshold leakage such as temperature, drain induced barrier lowering (DIBL) and other short channel effects have also been explored. All the measurements are carried out using extensive simulation on HSPICE circuit simulator at various technology nodes.

Keywords

Subthreshold leakage Scaling Threshold voltage Short channel 

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Copyright information

© Springer India 2016

Authors and Affiliations

  1. 1.Birla Institute of Technology, MesraRanchiIndia

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