Abstract
This paper presents designing and comparative analysis of noise and power for ring voltage-controlled oscillator (VCO) architectures. A two-stage complementary metal–oxide–semiconductor (CMOS) ring VCO and differential ring oscillator are designed with 180 nm technology and 3.3 V supply for high-resolution and low phase noise. The relative parameters that influence the VCO phase noise are discussed and analysed comprehensively. The tuning range of the designed VCO is from 1 to 5 GHz for a five-stage circuit and 1−2 GHz for a two-stage circuit. An improved VCO unit circuit is obtained by adding a wave shaping circuit at the output of VCO. We have taken the upper frequency range as 5 GHz because it will work properly for a data rate of up to 10 Gbps for an evenly phased signal passing with Nyquist data rate. Our simulation result proves that the designed two-stage CMOS differential VCO has low noise in comparison to other architectures. The circuit can also provide higher stability, better gain and dissipate low power. Our designed VCO is a relaxation oscillator and it will form triangular waveform in the high speed frequency range. The value obtained for phase noise for the two-stage differential CMOS ring oscillator is −292.52 dBc/Hz. Cadence Virtuoso has been used for simulation purpose.
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Dhruba Ghosh, Tripathy, M.R., Sujata Pandey (2016). Design of CMOS Ring Oscillators with Low Phase Noise and Power Dissipation for Data Transmission in RF Range. In: Afzalpulkar, N., Srivastava, V., Singh, G., Bhatnagar, D. (eds) Proceedings of the International Conference on Recent Cognizance in Wireless Communication & Image Processing. Springer, New Delhi. https://doi.org/10.1007/978-81-322-2638-3_19
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DOI: https://doi.org/10.1007/978-81-322-2638-3_19
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