Effect of Defects on Current-Voltage Characteristics of a Silicene ZNR-Based Field Effect Transistor

  • E. Meher Abhinav
  • M. Chandra Mohan
  • A. Suresh Reddy
  • Vemana Chary
  • Maragani Thirupathi
Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 379)


In this paper, we investigated the behavior of negative differential resistance (NDR) and analysis on various deformations like twist, wrap, and ripple/buckler and defects like vacancy and rough edge on short channel bilayer silicene zigzag nanoribbon (ZNR). Effects are caused by deformations like wrap with 5o and by rippling the channel by 0.5 Å amplitude on 6 nm silicene. FET is evaluated by density functional theory (DFT) and by nonequilibrium green’s function (NEGF) approach. We studied the I–V characteristics of deformations and defects. These characteristics of device with different conditions and mainly negative differential resistance (NDR) behavior are studied.


Germanene Zigzag nanoribbon (ZNR) Negative differential resistance (NDR) Metal-oxide-semiconductor field-effect transistor (MOSFET) Non-equilibrium green’s function (NEGF) Density functional theory (DFT) 



The authors thank the department of science and technology of the government of India for partially funding this work.


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Copyright information

© Springer India 2016

Authors and Affiliations

  • E. Meher Abhinav
    • 1
  • M. Chandra Mohan
    • 1
  • A. Suresh Reddy
    • 1
  • Vemana Chary
    • 1
  • Maragani Thirupathi
    • 1
  1. 1.Department of Electronic and CommunicationsMalla Reddy College of EngineeringHyderabadIndia

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