Performance Evaluation of InGaP/GaAs Solar Cell with Double Layer ARC
In order to obtain high-conversion percentage of the input available light, anti-reflection coating plays an important role in solar cell. In this work, the performance of InGaP/GaAs dual-junction solar cell has been investigated with single layer (Al2O3, TiO2, and ITO) and double layers (Al2O3/TiO2, and Al2O3/ITO) ARC. The work has been carried through computational numerical modeling TCAD tool ATLAS. The detailed photogeneration rates are determined, and the simulation results are validated with published experimental data. The model is implemented with optimized InGaP/GaAs dual-junction cell having Al2O3 and TiO2 as double layer anti-reflection coating with effective 500 nm InAlGaP bottom BSF. A maximum conversion efficiency of 39.9724 % is obtained under AM1.5G illumination for 1,000 suns. The absorpvity and reflectance of different anti-reflection coatings are also studied.
KeywordsAnti-reflection coating ATLAS Back surface field Dual-junction solar cell Short-circuit current Tunnel diode
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