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Design and Simulation of CNTFET by Varying the Position of Vacancy Defect in Channel

  • Shreekant
  • Sudhanshu Choudhary
Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 308)

Abstract

In this paper, we investigate the effect of vacancy defects in carbon nanotube field effect transistor (CNTFET) by applying the self-consistent solution of the Schrodinger and Poisson equations within the non-equilibrium Green’s function (NEGF) formalism and calculated its characteristics by creating vacancies at different positions in the CNTFET channel. It has been observed that due to the creation of vacancy defects in the channel region of the CNTFET, the ON-current increases and OFF-current decreases in comparison to non-defective channel CNTFET. The results show that single, double, and triple vacancies have a very minor effect on the CNTFET conductivity. However, a huge reduction in CNTFET conductivity was observed when the density of vacancy defects in the channel was increased.

Keywords

Carbon nanotube CNTFET Zigzag Defects Vacancy Non-equilibrium Green’s function (NEGF) 

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Copyright information

© Springer India 2015

Authors and Affiliations

  1. 1.School of VLSI Design and Embedded System DesignNIT KurukshetraKurukshetraIndia

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