Abstract
This work deals with the performance evaluation and characterization of an InAlAs/InGaAs-based high electron mobility transistor with different gate lengths viz. 50, 35, and 15 nm. A maximum drain current (I dss) of 398 mA/mm is achieved for a 15-nm-gate-length device with a V ds of 0.4 V as compared to 50- and 35-nm-gate-length HEMT with a current of 368 mA/mm and 384 mA/mm, respectively. A cutoff frequency (f T ) of 1.3 THz is reported for a 15 nm gate length, while a cutoff frequency of 625 GHz and 1.05 THz has been obtained for 50- and 35-nm-gate-length devices. The increase in cutoff frequency for a 15-nm-gate-length InAlAs/InGaAs-based HEMT results due to the decrease in transit time. A maximum oscillation frequency (f max) of 1.8 THz has been obtained for a 15-nm-gate-length device whereas a f max of 1.35 and 1.58 THz has been achieved for a 50- and 35-nm-gate-length HEMT. So, the device with ultrashort gate length performs better as compared to other two gate length devices.
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Mohapatra, M., Shukla, N., Panda, A. (2015). Ultra high-Speed InAlAs/InGaAs High Electron Mobility Transistor. In: Jain, L., Patnaik, S., Ichalkaranje, N. (eds) Intelligent Computing, Communication and Devices. Advances in Intelligent Systems and Computing, vol 308. Springer, New Delhi. https://doi.org/10.1007/978-81-322-2012-1_57
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DOI: https://doi.org/10.1007/978-81-322-2012-1_57
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