Interface Study of Individual and Stacked High-k/P-Si MOSCAPs by CV Technique

  • Milan Maitri Mishra
  • Gayatri Pradhan
  • Farida Ashraf Ali
  • Gouranga Bose
Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 308)


Interface trap charge density, threshold voltage, and flat band voltage of aluminum oxide (Al2O3), hafnium oxide (HfO2), titanium oxide (TiO2), and yttrium oxide (Y2O3) of different oxide thickness have been calculated after high-frequency CV simulation of MOSCAPs at room temperature, where P-type silicon is taken as substrate. The calculated Dit value is less in TiO2 (1.37 × 1010 eV−1 cm−2) than Al2O3 (4.81 × 1010 eV−1 cm−2), HfO2 (1.58 × 1010 eV−1 cm−2), and Y2O3 (2.34 × 1010 eV−1 cm−2) for 5 nm oxide thickness. The threshold and the flat band voltage of all oxide layers are found to be around 0.35 and −0.3 V, respectively, which match well with the experimentally reported values. Furthermore, the CV simulation, threshold, and flat band voltage calculations were done for 10-nm and 15-nm-thick individual oxides (Al2O3, HfO2, TiO2, and Y2O3) and compared. In addition, the interface trap charge densities, threshold voltages, and flat band voltages of stacked HfO2/TiO2 and Al2O3/TiO2, Y2O3/TiO2 are calculated for 2 nm oxide thickness by the same CV technique. It is found that the interface states of stacked HfO2/TiO2 (1.18 × 1010 eV−1 cm−2) are marginally less than stacked Al2O3/TiO2 (1.34 × 1010 eV−1 cm−2) and Y2O3/TiO2 (1.29 × 1010 eV−1 cm−2).


High-k Interface traps MOSCAPs Threshold voltage Flat band voltage 


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Copyright information

© Springer India 2015

Authors and Affiliations

  • Milan Maitri Mishra
    • 1
  • Gayatri Pradhan
    • 1
  • Farida Ashraf Ali
    • 1
  • Gouranga Bose
    • 1
  1. 1.Institute of Technical Education and Research (ITER)Siksha ‘O’ Anusandhan UniversityBhubaneswarIndia

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