Abstract
Till date, IMPact Avalanche Transit Time (IMPATT) has emerged as a most powerful semiconductor source in the range of microwave and millimetre wave for the application in high-range communication and RADAR. In this paper, IMPATT device has been designed for Ka-band reflection-type amplifier. The characterization of the amplifier has shown its efficiency as an initial high gain of about 17 dB for an input power of 10 µW. It is also being found that the gain decreases with the increase of input power and the gain becomes nearly 3 dB for an input power of 17 mW. It is being observed that the amplifier is very much stable over an input power range of 2–17 mW and can operate in CW mode.
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Mishra, L.P., Mitra, M. (2015). Design and Characterization of Ka-Band Reflection-Type IMPATT Amplifier. In: Jain, L., Patnaik, S., Ichalkaranje, N. (eds) Intelligent Computing, Communication and Devices. Advances in Intelligent Systems and Computing, vol 308. Springer, New Delhi. https://doi.org/10.1007/978-81-322-2012-1_51
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DOI: https://doi.org/10.1007/978-81-322-2012-1_51
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