Design and Characterization of Ka-Band Reflection-Type IMPATT Amplifier

Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 308)

Abstract

Till date, IMPact Avalanche Transit Time (IMPATT) has emerged as a most powerful semiconductor source in the range of microwave and millimetre wave for the application in high-range communication and RADAR. In this paper, IMPATT device has been designed for Ka-band reflection-type amplifier. The characterization of the amplifier has shown its efficiency as an initial high gain of about 17 dB for an input power of 10 µW. It is also being found that the gain decreases with the increase of input power and the gain becomes nearly 3 dB for an input power of 17 mW. It is being observed that the amplifier is very much stable over an input power range of 2–17 mW and can operate in CW mode.

Keywords

IMPATT amplifier CW amplifier Ka-band amplifier Reflection-type amplifier 

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Copyright information

© Springer India 2015

Authors and Affiliations

  1. 1.Department of ECE, ITERSiksha ‘O’ Anusandhan UniversityBhubaneswarIndia
  2. 2.Department of E&TCIIESTShibpurIndia

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