Design and Characterization of Ka-Band Reflection-Type IMPATT Amplifier

Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 308)


Till date, IMPact Avalanche Transit Time (IMPATT) has emerged as a most powerful semiconductor source in the range of microwave and millimetre wave for the application in high-range communication and RADAR. In this paper, IMPATT device has been designed for Ka-band reflection-type amplifier. The characterization of the amplifier has shown its efficiency as an initial high gain of about 17 dB for an input power of 10 µW. It is also being found that the gain decreases with the increase of input power and the gain becomes nearly 3 dB for an input power of 17 mW. It is being observed that the amplifier is very much stable over an input power range of 2–17 mW and can operate in CW mode.


IMPATT amplifier CW amplifier Ka-band amplifier Reflection-type amplifier 


  1. 1.
    Johnston, R.L., Loach, B.C., Cohen, B.G.: A silicon diode microwave oscillator. Bell Syst. Tech. J. 44(2), 369–372 (1965)CrossRefGoogle Scholar
  2. 2.
    Lee, C.A., Batdorf, R.L., Weignmann, W., Kaminsky, G.: Technological developments evolving from research on Read diodes. IEEE Trans. Electron Devices 13(1), 175–180 (1966)CrossRefGoogle Scholar
  3. 3.
    Hines, M.E.: Negative resistance diode power amplification. IEEE Trans. Electron Devices 17(1), 1–8 (1970)CrossRefGoogle Scholar
  4. 4.
    Snider, D.M.: A one watt CW high—efficiency X-Band Avalanche diode amplifier. IEEE Trans. Microwave Theory Tech. 18(11), 963–967 (1970)CrossRefGoogle Scholar
  5. 5.
    Liu, C.M., Sovero, E.A., Ho, W.J., Higgins, J.A., De Lisio, M.P., Rutledge, D.B.: Monolithic 40-GHz 670-mW HBT grid amplifier. In: IEEE MTT-S International Microwave Symposium Digest, pp. 1123–1126, June (1996)Google Scholar
  6. 6.
    De Lisio, M.P., Duncan, S.W., Tu, D.-W., Weinreb, S., Liu, C.-M., Rutledge, D.B.: A 44/60 GHz monolithic pHEMT grid amplifier. In: IEEE MTT-S International Microwave Symposium Digest, vol. 2, pp. 1127–1130, June (1996)Google Scholar
  7. 7.
    Sovero, E.A., Hacker, J.B., Higgins, J.A., Deakin, D.S., Sailer, A.L.: Ka-band monolithic quasi-optic amplifier. In: IEEE MTT-S International Microwave Symposium Digest, pp. 1453–1456, June (1998)Google Scholar
  8. 8.
    Gouker, M.: Toward standard figures-of-merit for spatial and quasi-optical power-combined arrays. IEEE Trans. Microwave Theory Tech. 43(7), 1614–1617 (1995)CrossRefGoogle Scholar
  9. 9.
    Pal, T.K., Banerjee, J.P.: Study of efficiency of Ka-band IMPATT diodes and oscillators around optimized condition. Int. J. Adv. Sci. Technol. 26 (2011)Google Scholar
  10. 10.
    Acharyya, A., Banerjee, S., Banerjee, J.P.: Dependence of DC and small-signal properties of double drift region silicon IMPATT device on junction temperature. J. Electron Devices 12, 725–729 (2012)Google Scholar

Copyright information

© Springer India 2015

Authors and Affiliations

  1. 1.Department of ECE, ITERSiksha ‘O’ Anusandhan UniversityBhubaneswarIndia
  2. 2.Department of E&TCIIESTShibpurIndia

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