Effect of Strain on the Band Line Up and Built in Electric Field of Strained AlGaN/GaN and InGaN/GaN Quantum Well

Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 298)

Abstract

One of the important parameters associated with the carrier confinement of hetero structures is their band line up. Here we have developed the relations to compute the band line up of materials AlxGa1-xN/GaN and InxGa1-xN/GaN and the effect of strain in the built in electric field. The band positions for the heterointerfaces of InxGa1-xN/GaN and AlxGa1-xN/GaN are calculated from equations developed, which are related with the position of the bands with the strain at the interface and are compared. Thus the strain is calculated and compared for both InxGa1-xN/GaN and AlxGa1-xN/GaN from the respective In and Ga mole fraction (Panda et al., International conference on computers and devices for communication, 2009) [1]. Due to the non-centrosymmetric structure of the hexagonal III-nitrides, spontaneous polarization exists in bulk films. In addition, when fabricating heterostructures of GaN/AlGaN or GaN/InGaN, the effect of piezoelectric polarization due to strain has to be taken into account. Both the spontaneous and piezoelectric polarization give rise to a large built-in field (Ng et al., J Electron Mater 30, 2001) [2].

Keywords

Band lineup Built-in electric field Strain 

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Copyright information

© Springer India 2014

Authors and Affiliations

  1. 1.Asansol Engineering CollegeAsansolIndia

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