The Structural Studies of Luminescent Vapour Phase Etched Porous Silicon

  • Madhumita Das Sarkar
  • Debashis Jana
  • Kuntal Ghosh
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 298)


Porous Silicon (PS) layers have been fabricated on p-type crystalline silicon (c-Si) using Reaction Induced Vapour Phase Stain Etching (RIVPSE) for different growth condition. The morphological properties of the porous Silicon samples have been investigated by using Scanning Electron Microscope (SEM). The Scanning electron micrographs indicate that these samples have structures of predominantly small size clusters having dual nature of pores instead of the postulated columns. Bonding structures for the samples have been investigated by using Fourier Transform Infrared Spectroscopy (FTIR) and compared for different metal induced (Zn, Al + Si, Si) vapour phase stain etching. The study reveals that Zn induced vapour phase stain etched porous silicon is most reactive surface and may be of greater life.


Porous silicon Vapour phase stain etching Fourier transform infrared spectroscopy Scanning electron microscope 



We thankfully acknowledge Dr. Rupak Bhadra, IICB Kolkata for Scanning Electron microscope images. We also heartily acknowledge Mr. Kuntal Ghosh, IIT Bombay for FTIR data.


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Copyright information

© Springer India 2014

Authors and Affiliations

  1. 1.Department of Computer Science EngineeringWest Bengal University of TechnologyKolkataIndia
  2. 2.Indian Institute of TechnologyBombayIndia

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