The Structural Studies of Luminescent Vapour Phase Etched Porous Silicon

Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 298)

Abstract

Porous Silicon (PS) layers have been fabricated on p-type crystalline silicon (c-Si) using Reaction Induced Vapour Phase Stain Etching (RIVPSE) for different growth condition. The morphological properties of the porous Silicon samples have been investigated by using Scanning Electron Microscope (SEM). The Scanning electron micrographs indicate that these samples have structures of predominantly small size clusters having dual nature of pores instead of the postulated columns. Bonding structures for the samples have been investigated by using Fourier Transform Infrared Spectroscopy (FTIR) and compared for different metal induced (Zn, Al + Si, Si) vapour phase stain etching. The study reveals that Zn induced vapour phase stain etched porous silicon is most reactive surface and may be of greater life.

Keywords

Porous silicon Vapour phase stain etching Fourier transform infrared spectroscopy Scanning electron microscope 

Notes

Acknowledgments

We thankfully acknowledge Dr. Rupak Bhadra, IICB Kolkata for Scanning Electron microscope images. We also heartily acknowledge Mr. Kuntal Ghosh, IIT Bombay for FTIR data.

References

  1. 1.
    Xu J, Steckl AJ (1995) Stain etched porous silicon visible light emitting diodes. J Vac Sci Technol B 13(3):1221–1224CrossRefGoogle Scholar
  2. 2.
    Palsule LC, Liu S, Gangopadhyay S, Holtz M, Lamp D, Kristiansen M (1997) Electrical and optical characterisation or crystalline silicon/porous silicon heterojunctions. Solar Energ Mater. Solar Cells 46:261–269Google Scholar
  3. 3.
    Pickering C, Beale MJJ, Robbins DJ, Pearson PJ, Greef R (1984) Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate silicon. J Phys CI7(35):6535–6552Google Scholar
  4. 4.
    Deal BE, Grove AS (1965) General relationship for the thermal oxidation of silicon. J Appl Phy 36(12):3770–3778Google Scholar
  5. 5.
    Akiyama T, Kageshima H (2003) Microscopic mechanism of interfacial reaction during Si oxidation. App Surf Sci 216:270CrossRefGoogle Scholar
  6. 6.
    Koynov S, Brandit MS, Stutzmann M (2006) Black nonreflecting silicon surfaces for solar cells. Appl Phys Lett 88:203107CrossRefGoogle Scholar
  7. 7.
    Pickering C, Beale MJJ, Robbins DJ, Pearson PJ, Gree R (1984) Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate silicon. J Phys CI7:6535–6552Google Scholar
  8. 8.
    Duttagupta SP et al (1998) Photovoltaic device applications of porous microcrystalline silicon. Solar Energ Mater. Selar Cells 52:271–283CrossRefGoogle Scholar
  9. 9.
    Schirone L, Sotgiu G, Parisini A, Montecchi M (1997) Optical and morphological properties of stain-etched porous silicon films for anti-reflection coatings of photovoltaic devices. Solid State Phenom 54:59–64Google Scholar
  10. 10.
    Ben Ranha M, Bessais B (2010) Enhancement of photovoltaic properties of multicrystalline silicon solar cells by combination of buried metallic contacts and thin porous silicon. Sol Energ 84:486–491CrossRefGoogle Scholar
  11. 11.
    Salman KA, Omar K, Hassan Z (2012) Effective conversion efficiency enhancement of solar cell using ZnO/PS antireflection coating layers. Sol Energ 86:541–547CrossRefGoogle Scholar

Copyright information

© Springer India 2014

Authors and Affiliations

  1. 1.Department of Computer Science EngineeringWest Bengal University of TechnologyKolkataIndia
  2. 2.Indian Institute of TechnologyBombayIndia

Personalised recommendations