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Modeling and Simulation of High Speed 8T SRAM Cell

  • Raj Johri
  • Ravindra Singh Kushwah
  • Raghvendra Singh
  • Shyam Akashe
Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 202)

Abstract

SRAM cells are known for their high speed operation and low power consumption, and have got considerable attention in research works. Different cell topologies have been developed and proposed to improve various important parameters of the cell to make them favorable for practical operations. These parameters include power consumption, leakage current, stability and speed of response. The paper here describes new 8T SRAM cell which is quite different from recently proposed 8T cells. The modification has been done to increase the speed of cell by reducing the write access time. The other parameters especially power consumption of cell has also been kept in consideration.

Keywords

8T SRAM High speed SRAM cell Power consumption 

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Copyright information

© Springer India 2013

Authors and Affiliations

  • Raj Johri
    • 1
  • Ravindra Singh Kushwah
    • 1
  • Raghvendra Singh
    • 1
  • Shyam Akashe
    • 2
  1. 1.M Tech VLSI ITM UniversityGwaliorIndia
  2. 2.ECEDITM UniversityGwaliorIndia

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