Abstract
This chapter handles interface band alignment that can not be controlled by S parameter. Such band alignment appears to have something to do with the generalized charge neutrality level (generalized CNL). However, to discuss the generalized CNL quantitatively, density functional theory (DFT) calculations for each interface are necessary. Without DFT calculations, some experimental examples are demonstrated for interface termination and interface layer insertion. For interface termination (interface modification at 1 atomic thickness without changing the bulk), interface between Al2O3 and some metals is explained as well as interface between ZnO and some metals. The chemical bonding at these interfaces is discussed, which the concept of the generalized CNL is based on. As for 1-atomic-thick layer (mostly dielectric layer) insertion at the interface, H passivation (insertion of H at the interface) and insertion of 0.5-nm-thick LiF or MgO are presented. More than 1.5 eV difference in the Schottky barrier height has been observed by H passivation at the interface between diamond and several metals. An effect of LiF or CsF layer insertion is also demonstrated at the interface between an organic semiconductor and a metal.
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19 February 2021
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References
Yoshitake M, Song W, Libra J, Mašek K, Šutara F, Matolín V, Prince KC (2008) Interface termination and band alignment of epitaxially grown alumina film on Cu–Al alloy. J Appl Phys 103:033707-1-033707–5
Nemšák S, Skála T, Yoshitake M, Tsud N, Prince KC, Matolín V (2010) A photoelectron spectroscopy study of ultra-thin epitaxial alumina layers grown on Cu(111) surface. Surf Sci 604:2073–2077
Alber U, Mullejans H, Ruhle M (1999) Wetting of copper on α-Al2O3 surfaces depending on the orientation and oxygen partial pressure. Micron 30:101–108
Merlin V, Eustathopoulos M (1995) Wetting and adhesion of Ni-Al alloys on α-Al203 single crystals. J Mater Sci 30:3619–3624
Chantain D, Chabert F, Ghetta V, Fouletier J (1994) New experimental setup for wettability characterization under monitored oxygen activity: II, wettability of sapphire by silver-oxygen melts. J Am Ceram Soc 77:197–201
Yoshitake M, Yagyu S, Chikyow T (2014) Novel method for the prediction of an interface bonding species at alumina/metal interfaces. J Vac Sci Technol A 32:021102-1-021102–8
Kohyama M, Tanaka S, Maeda KO, Akita T (2007) Theoretical studies of the atomic and electronic structure of nano-hetero metal/inorganic material interfaces in collaboration with electron microscopy observations. Mater Trans 48:675–683
Yoshitake M, Nemšák S, Skála T, Tsud N, Kim T, Matolín V, Prince KC (2010) Modification of terminating species and band alignment at the interface between alumina films and metal single crystals. Surf Sci 604:2150–2156
Ciraci S, Batra IP (1983) Electronic structure of α-alumina and its defect states. Phys Rev B 28:982–992
Nagata T, Ahmet P, Yoo YZ, Yamada K, Tsutsui K, Wada Y, Chikyow T (2006) Schottky metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted deposition. Appl Surf Sci 252:2503–2506
Yoshitake M, Blumentrit P, Nemsak S (2013) X-ray photoelectron spectroscopic study on interface bonding between Pt and Zn- and O-terminated ZnO. J Vac Sci Technol A 31:020601-1-020601–5
Dong Y, Brillson LJ (2008) First-principles studies of metal(111)/ZnO{0001} interfaces. J Electron Mater 37:743–748
Mönch W (2012) On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts. J Appl Phys 111:073706–073707
Hung LS, Tang CW, Mason MG (1997) Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode. Appl Phys Lett 70:152–154
Fang L, Baik SJ, Lim S, Yoo S, Lim KS (2011) Amorphous Si rear Schottky junction solar cell with a LiF/Al back electrode. IEEE Trans Electron Devices 58:3048–3052
Brown TM, Friend RH, Millard IS, Lacey DJ, Butler T, Burroughes JH, Cacialli F (2003) Electronic line-up in light-emitting diodes with alkali-halide/metal cathodes. J Appl Phys 93:6159–6172
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Yoshitake, M. (2021). Utilization of Interface Potential. In: Work Function and Band Alignment of Electrode Materials. NIMS Monographs. Springer, Tokyo. https://doi.org/10.1007/978-4-431-56898-8_7
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DOI: https://doi.org/10.1007/978-4-431-56898-8_7
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