Abstract
Horizontally aligned single-walled carbon nanotubes (SWNTs) were fabricated on patterned SiO2∕Si substrates with groove-and-terrace or half-cylinder structures by electron-beam lithography and reactive ion etching. Scanning electron microscopy observation reveals that the SWNTs were aligned in the direction parallel to the patterned structures and were preferentially grown along the edges of terraces or along the sidewalls of the half cylinders. The results are consistent with calculations obtained using the Casimir–Polder potential between the SWNTs and the patterned substrates. Using aligned SWNTs as multichannels, carbon nanotube field-effect transistors (CNT-FETs) were fabricated on the patterned SiO2∕Si substrates. This method will be promising to control the directions of the SWNTs on SiO2∕Si substrates.
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References
Han S, Liu X, Zhou C (2005) Template-free directional growth of single-walled carbon nanotubes on a- and r-plane sapphire. J Am Chem Soc 127:5294–5295
Kocabas C, Hur S, Gaur A, Meitl M, Shim M, Rogers J (2005) Guided growth of large-scale, horizontally aligned arrays of single-walled carbon nanotubes and their use in thin-film transistors. Small 1:1110–1116
Kang S, Kocabas C, Ozel T, Shim M, Pimparkar N, Alam M, Rotkin S, Rogers J (2007) High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. Nat Nanotechnol 2:230–236
Shulaker MM, Hills G, Patil N, Wei H, Chen H-Y, Wong H-SP, Mitra S (2013) Carbon nanotube computer. Nature 501:526–530
Liu X, Han S, Zhou C (2006) Novel Nanotube-on-Insulator (NOI) approach toward single-walled carbon nanotube devices. Nano Lett 6:34–39
Cao Q, Kim H, Pimparkar N, Kulkarni J, Wang C, Shim M, Roy K, Alam M, Rogers J (2008) Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates. Nature 454:495–500
Huang S, Cai X, Liu J (2003) Growth of millimeter-long and horizontally aligned single-walled carbon nanotubes on flat substrates. J Am Chem Soc 125:5636–5637
Casimir H, Polder D (1948) The influence of retardation on the London-van der Waals Forces. Phys Rev 73:360–372
Milton K, Parashar P, Wagner J (2008) Exact results for casimir interactions between dielectric bodies: the weak-coupling or van der Waals limit. Phys Rev Lett 101:160402
Cao Q, Rogers J (2009) Ultrathin films of single-walled carbon nanotubes for electronics and sensors: a review of fundamental and applied aspects. Adv Mater 21:29–53
McNicholas T, Ding L, Yuan D, Liu J (2009) Density enhancement of aligned single-walled carbon nanotube thin films on quartz substrates by sulfur-assisted synthesis. Nano Lett 9:3646–3650
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Ohno, Y., Kamimura, T., Maehashi, K., Inoue, K., Matsumoto, K. (2015). Aligned Single-Walled Carbon Nanotube Growth on Patterned SiO2/Si Substrates. In: Matsumoto, K. (eds) Frontiers of Graphene and Carbon Nanotubes. Springer, Tokyo. https://doi.org/10.1007/978-4-431-55372-4_10
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DOI: https://doi.org/10.1007/978-4-431-55372-4_10
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