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Einsatz Bipolarer Transistoren in CMOS-Operationsverstärkern

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Mikroelektronik 87
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Zusammenfassung

Durch den Einsatz bipolarer Transistoren in der Eingangsstufe kann die Eingangsoffsetspannung von CMOS-Operationsverstärkern wesentlich reduziert werden. Dabei kommen Vertikal- und Late raltransistoren, die in CMOS-Technologie realisiert werden können, zum Einsatz.

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Literatur

  • 1) P.R. Gray, R.G. Meyer; MOS Operations Amplifier Design A Tutorial Overview IEEE Journal of Solid-State Circuits; Dec. 1982

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  • E. A. Vittoz; MOS Transistors Operated in the Literal Bipolar Mode and their Application in CMOS Technology; IEEE Journal of Solid-State Circuits; June 1983

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  • 3)C.A. Laber, C.F. Rahim, S.F. Dreyer, G.T. Uehara, P.T. Kwok, P.R. Gray; Design Considerations for a High Performance 3-um CMOS Analog Standard-Cell Library IEEE Journal of Solid-State Circuits; April 1987

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© 1987 Springer-Verlag/Wien

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Gauby, A. (1987). Einsatz Bipolarer Transistoren in CMOS-Operationsverstärkern. In: Mikroelektronik 87. Springer, Vienna. https://doi.org/10.1007/978-3-7091-8940-5_5

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  • DOI: https://doi.org/10.1007/978-3-7091-8940-5_5

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-211-82023-0

  • Online ISBN: 978-3-7091-8940-5

  • eBook Packages: Springer Book Archive

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