Abstract
In VLSI-technology (Very Large Scale Integration) tolerances of process parameters are decreasing. Process modelling (in this paper the simulation of dopant profiles) has become an essential development tool. Thermal diffusion is occurring in every temperature step (typical temperature 800–1100 °C). Therefore basic understanding of the physical process influencing the diffusion is very important (e.g. mutual diffusion of different dopant elements, oxidation, nitriding). Since the early 60’s it was already known that at high concentrations (> ~ 1020 cm−3) classical theories (complementary error function, Gaussian distribution) do not correctly describe dopant profiles in silicon. Because of the lack of suitable models they were used up to the early 70’s. After this period more complex models which tried to take into account basic physical concepts were developed. The calculations are mathematically complicated requiring simultaneous partial differential equations.
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Dedicated to Prof. Dr. Karl Winsauer, Johannes Kepler Universität Linz, on the occasion of his 60th birthday.
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© 1985 Springer-Verlag
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Stingeder, G., Grasserbauer, M., Traxlmayr, U., Guerrero, E., Pötzl, H. (1985). Quantitative Distribution Analysis of Phosphorus in Silicon with Secondary Ion Mass Spectrometry. In: Grasserbauer, M., Wegscheider, W. (eds) Progress in Materials Analysis. Mikrochimica Acta Supplementum, vol 11. Springer, Vienna. https://doi.org/10.1007/978-3-7091-8840-8_14
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DOI: https://doi.org/10.1007/978-3-7091-8840-8_14
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