Abstract
The development of a n-well HCMOS technology is described and the critical process parameters are defined. High speed with low power dissipation performance have been demonstrated. For effective channel lengths larger than 2 µm, operation with voltages greater 10 V is possible.
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© 1985 Springer-Verlag/Wien
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Athanas, T. (1985). N-Well CMOS Technology for High Performance LSI-VLSI Applications. In: Mikroelektronik in Österreich. Springer, Vienna. https://doi.org/10.1007/978-3-7091-8821-7_12
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DOI: https://doi.org/10.1007/978-3-7091-8821-7_12
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-81893-0
Online ISBN: 978-3-7091-8821-7
eBook Packages: Springer Book Archive