Abstract
In an era which is dominated by an always faster and larger flow of information, microelectronics plays a major role. The building block of today’s microelectronics are semiconductor devices, which are used either as single components in a variety of applications (process controllers, antennas, sensors, radios, etc.,...) as well as in integrated circuits. Since the invention of the bipolar transistor in 1949, many new devices have been proposed and improved performances have been constantly achieved. Before this date, semiconductors were only used as thermistors, photodiodos and rectifiers. The advances in the field of semiconductor devices are the combined results of better understanding of the physical processes that underline the electrical behaviour of devices, of an improved handling of technological processes involved with the fabrication of the devices, of the mature knowledge of the chemical properties of the materials that are used, and of the combination of all these factors. In other words, electronics have been able to make big steps forward in the last few decades thanks to the progress in the physical, chemical and material sciences, as well as the development of new technological tools. The best example is given by the fact that we are currently able to put hundreds of thousands of devices onto a single chip, well into what is called very-large-scale integration (VLSI) [1].
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References
Mead, C. A., Conway, L.: Introduction to VLSI Systems. Reading, Mass.: Addison-Wesley. 1980.
Moore, G.: Proc. IEDM 1975, p. 11. New York: IEEE Press. 1975.
Ferry, D. K., Akers, L. A., Greeneich, E. W.: Ultra-Large-Scale Integrated Microelectronics. Englewood Cliffs, N.J.: Prentice-Hall. 1988.
Sze, M.: Physics of Semiconductor Devices, 2nd edn. New York: Wiley. 1981.
Muller, R. S., Kamins, T. I.: Device Electronics for Integrated Circuits. New York: Wiley. 1986.
Solomon, P. M.: Proc. IEEE 70, 489 (1982).
Eden, R. C.: Proc. IEEE 70, 5 (1982).
Solomon, P. M., Morkoc, H.: IEEE Trans. El. Devices ED-31, 1015 (1984).
Kroemer, H.: Proc. IEEE 70, 13 (1982).
Scavennee, A.: J. de Physique C4 [Suppl. 9], 115 (1988).
Zanoni, E., Lugli, P., Canali, C., Alberigi. Quaranta, A.: Fisica e Tecnologia 9, 75 (1986).
Pamlin, B. R. (ed.): Molecular Beam Epitaxy. Oxford: Pergamon Press. 1980;
Ploog, K., Graf, K.: Molecular Beam Epitaxy of III–V Compounds. Berlin-Heidelberg-New York: Springer 1984;
Cho, A. Y.: J. Vac. Sci. Technol. 16, 275 (1979).
Razeghi, M., Duchemin, J. P.: In: Two-Dimensional Systems, Heterostructures and Superlattices (Baver, G., Kuchar, F., Heinrich, H., eds.), p. 100. Berlin-Heidelberg-New York: Springer. 1984;
Jones, M. W.: In: Two-Dimensional Systems, Heterostructures and Superlattices (Baver, G., Kuchar, F., Heinrich, H., eds.), p. 115. Berlin-Heidelberg-New York: Springer. 1984.
Esaki, L., Tsu, R.: IBM Res. Rep. RC-2418 (1969).
Kroemer, H.: Proc. IRE 45, 1535 (1957).
Lepselter, M. P., Andrews, J. M.: In: Ohmic Contacts in Semiconductors (Schwartz, B., ed.), The Electrochemical Society Symposium Series, p. 159. New York: Electrochemical Society 1969.
Rideout, V. L.: Solid State Electron. 18, (541 (1975).
Pickar, K. A.: Ion Implantation in Silicon-Physics, Processing and Microelectronics Devices. In: Applied Solid State Science (Wolfe, R., ed.), Vol. 5. New York: Academic Press. 1975.
Dennard, R. H., Gaensslen, F. H., Yu, H., Rideout, V. L., Bassons, E., Blanc, A. R.: IEEE J. Solid State Circuits SC-9, 256 (1974).
Meindl, J. D.: Scientific American 257, 54 (1987).
Keyes, R.: Proc. IEEE, 63, 740 (1975).
Moll, J. L.: Proc. IRE 46, 1076 (1958).
Zanoni, E., Lugli, P., Canali, C., Alberigi-Quaranta, A.: Fisica e Tecnologia 10, 83 (1987).
Capasso, F.: In: Semiconductors and Semimetals, Vol. 24, p. 319. New York: Academic Press. 1988.
Rhoderick, E. H.: Metal-Semiconductor Contacts. Oxford: Clarendon Press. 1978.
Liechti, C. A.: IEEE Trans. Microwave Theory Tech. MTT-24, 279 (1976).
Ferry, D. K.: In: VLSI Electronics: Microstructure Science, Vol. 1, p. 231. New York: Academic Press. 1981.
Hill, A. J., Ladbrooke, P. M.: GEC J. Res. 4, 1 (1986).
Drummond, T. J., Masselink, W. T., Morkoc, H.: Proc. IEEE 74, 773 (1986).
Mead, C. A.: Proc. IRE 48, 359 (1960).
Moll, J. L.: IEEE Trans. El. Dev. ED-10, 299 (1963).
Poate, J. M., Dynes, R. C.: IEEE Spectrum, p. 38. February 1986.
Levi, A. F. J., Hayes, J. R., Platzman, P. M., Wiegmann, W.: Phys. Rev. Lett. 55, 2071 (1985).
Heiblum, M., Nathan, M. I., Thomas, D. C., Knodler, C. M.: Phys. Rev. Lett. 55, 2200 (1985).
Malik, R. J., Hollis, M. A., Eastman, L. F., Woodard, D. J., Wood, C. E. C., Aucoins, T. R.: In: Proc, Conf. Active Microwave Devices, Cornell University, Ithaca, N.Y., 1981.
Heiblum, M.: Solid-State Electron. 24, 343 (1981).
Heiblum, M., Eastman, L. F.: Scientific American 256, 64 (1987).
Bozler, C. O., Alley, G. D., Murphy, R. A., Flanders, D. C., Lindley, W. T.: IEEE Tech. Dig. Int. Electron. Dev. Meet., p. 384 (1979).
Mimura, T., Nishiuchi, N., Abe, M., Shibatomi, A., Kobayanshi, M.: Superlattice and Microstr. 1, 365 (1985).
Art, W. H.: Microwellen Magazin 14, 106 (1988).
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Jacoboni, C., Lugli, P. (1989). Review of Semiconductor Devices. In: The Monte Carlo Method for Semiconductor Device Simulation. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6963-6_4
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DOI: https://doi.org/10.1007/978-3-7091-6963-6_4
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