Abstract
We present the two-dimensional optimization of the acceptor doping profile of a 0.25 µm MOSFET which improves the drive current by 48% compared to a uniformly doped device delivering the same drain-source leakage current. Various values for the supply voltage and the allowed leakage current are used to qualitatively investigate their influence on the optimal profile.
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Stockinger, M., Strasser, R., Plasun, R., Wild, A., Selberherr, S. (1998). A Qualitative Study on Optimized MOSFET Doping Profiles. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_22
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_22
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7415-9
Online ISBN: 978-3-7091-6827-1
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