Abstract
We report a new approach for efficient computation of capacitance in multi- conductor systems embedded in homogeneous or multiple dielectric media. The technique employs exponential expansion of the Green’s function 1/r for evaluation of the three-dimensional potential and its gradient, enabling rapid and accurate extraction of interconnect capacitance in VLSI and large-area amorphous silicon electronics. Additionally, it can be used for analysis of electrostatic interaction in micro-electro-mechanical systems (MEMS).
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© 1998 Springer-Verlag/Wien
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Pham, H.H., Nathan, A. (1998). Exponential Expansion for Rapid and Accurate Extraction of Interconnect Capacitance. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_19
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_19
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7415-9
Online ISBN: 978-3-7091-6827-1
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