Abstract
A model of the Monte Carlo simulation is used for calculating profiles of the backscattered electron intensity and the secondary electron yield caused by the scanning electron beam. In order to get a fast yield calculation a simple procedure has been developed to describe the escape of secondary electrons. In the present paper first simulations are discussed with the aim of comparing backscattered electron and secondary electron profiles of wall and trench structures. Special attention is given to the influence of the shape of the target surface topography on the electron backscattering and secondary emission.
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References
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© 1992 Springer-Verlag Wien
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Eisenschmidt, C., Werner, U. (1992). Monte Carlo Simulation of Backscattered and Secondary Electron Profiles. In: Boekestein, A., Pavićević, M.K. (eds) Electron Microbeam Analysis. Mikrochimica Acta, vol 12. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6679-6_10
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DOI: https://doi.org/10.1007/978-3-7091-6679-6_10
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-82359-0
Online ISBN: 978-3-7091-6679-6
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