Abstract
To accurately predict the effects of self-heating in a power p-i-n diode, we have applied self-consistent device simulation using a thermodynamically rigorous electrothermal model [1] implemented in the device/circuit simulator Simul [2]. Results of steady-state and high-voltage turn-off simulations with external electrical and thermal circuit elements are presented comparing the isothermal and self-heating cases.
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© 1993 Springer-Verlag Wien
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Kells, K., Müller, S., Wachutka, G., Fichtner, W. (1993). Simulation of Self-Heating Effects in a Power p-i-n Diode. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_9
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_9
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
Online ISBN: 978-3-7091-6657-4
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