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A Powerful TCAD System Including Advanced RSM Techniques for Various Engineering Optimization Problems

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Simulation of Semiconductor Devices and Processes

Abstract

This paper presents the NORMAN/DEBORA TCAD system developed at IMEC to design and optimize sub-micron IC technology using process and device simulators. The versatility of the TCAD system will be shown for two important problems encountered in IC technology design and optimization.

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References

  1. R.H. Myers, A.I. Khuri, W.H. Carter, jr. Response Surface Methodology: 1966–1988, Technometrics Vol.31, no.2,pp 137–157,1989

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  2. R. Cartuyvels, R. Booth, L. Dupas, K. De Meyer.Process Technology Optimization Using An Integrated Process and Device Simulation Sequencing System, ESS-DERC’92,Leuven.

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Author information

Authors and Affiliations

  1. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    R. Cartuyvels, S. Kubicek, L. Dupas & K. M. De Meyer

  2. AT&T, 1247 South Cedar Crest Blvd, Allentown, PA, 18103, USA

    R. Booth

Authors
  1. R. Cartuyvels
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  2. R. Booth
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  3. S. Kubicek
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  4. L. Dupas
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  5. K. M. De Meyer
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Cartuyvels, R., Booth, R., Kubicek, S., Dupas, L., De Meyer, K.M. (1993). A Powerful TCAD System Including Advanced RSM Techniques for Various Engineering Optimization Problems. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_6

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_6

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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